Unisantis Electronics, a startup led by Fujio Masuoka, the inventor of NAND memory, has developed Dynamic Flash Memory (DFM), a volatile type of mem

DRAM Alternative Developed: 4X Higher Density at Higher Speed and Lower Power

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2021-05-27 18:30:03

Unisantis Electronics, a startup led by Fujio Masuoka, the inventor of NAND memory, has developed Dynamic Flash Memory (DFM), a volatile type of memory that promises four times higher density than dynamic random access memory (DRAM) along with higher performance and lower power consumption.

DRAM memory relies on arrays of charge storage cells consisting of one capacitor and one transistor per data bit. Capacitors charge transistors when '1' is recorded into that cell and discharge when '0' is recorded into that cell. The arrays are arranged in horizontal wordlines and vertical bitlines. Each column of cells consists of two '+' and '−' bitlines that are connected to their own sense amplifiers that are used to read/write data from/to the cells. Both read and write operations are performed on wordlines, and it is impossible to address a single bit.

Throughout the history of DRAM, manufacturers have focused on making memory cells smaller by applying new cell structure and process technologies in a bid to increase DRAM capacity, reduce power consumption, and improve performance.