Micron on Thursday announced the industry's first 3D NAND memory device featuring 232 layers. The company plans to use its new 232-layer 3D NAND produ

Micron Announces 232-Layer 3D NAND Flash

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2022-05-13 20:00:07

Micron on Thursday announced the industry's first 3D NAND memory device featuring 232 layers. The company plans to use its new 232-layer 3D NAND products for a variety of products, including solid-state drives and plans to start ramping up production of such chips sometimes in late 2022.

Micron's 232-layer 3D NAND device features a 3D TLC architecture and has a raw capacity of 1Tb (128GB). The chip is based around Micron's CMOS under array (CuA) architecture and uses NAND string stacking technique to build two arrays of 3D NAND on top of each other.

The CuA design coupled with 232-layers of NAND will greatly reduce die size of Micron's 1Tb 3D TLC NAND memory, which promises to decrease production costs and enable Micron to price devices featuring these chips more aggressively or just increase its margins.

Micron did not announce I/O speeds or the number of planes featured by its new 232L 3D TLC NAND IC, but implied that the new memory will provide higher performance compared to existing 3D NAND devices, which will be particularly useful for next-generation SSDs featuring a PCIe 5.0 interface.