SEOUL, June 22 (Yonhap) -- Samsung Electronics Co. is expected to announce mass production of 3-nanometer semiconductors next week, sources said Wednesday, beating its foundry rival TSMC in advanced chipmaking process.
The next-generation 3nm chips will be built on the Gate-All-Around (GAA) technology, which Samsung said will allow up to 45 percent area reduction while providing 30 percent higher performance and 50 percent lower power consumption, compared with the existing FinFET process.
The South Korean tech giant showcased its 3nm chips to U.S. President Joe Biden last month when he visited Samsung's Pyeongtaek complex, the world's largest semiconductor facility located some 70 kilometers south of Seoul.
TSMC, the world's largest contract chip manufacturer, said it will begin mass production of 3nm chips in the second half of the year.
The two companies have been in fierce competition to outperform each other by bringing the most advanced and efficient chips to the mass market and to win customers for contract chip manufacturing.