First complementary vertical organic transistors reach GHz speeds
Just as Dresden is at the heart of the complementary metal oxide semiconductor (CMOS) industry in Europe, so it is also becoming the centre for a new generation of complementary organic transistors.
A team at the Technische Universität Dresden has developed the first implementation of a complementary vertical organic transistor technology. The transistor can operate at low voltage, with adjustable inverter properties, and a fall and rise time demonstrated in inverter and ring-oscillator circuits of 11 nanoseconds
This is a key step for commercialization of efficient, flexible and printable electronics. High-frequency logic circuits, such as inverter circuits and oscillators with low power consumption and fast response time, are the essential building blocks for large-area, low power-consumption, flexible and printable electronics of the future.
The Organic Devices and Systems (ODS) group at the Institute of Applied Physics (IAP) at TU Dresden is headed by Dr Hans Kleemann. The organic permeable base transistors (OPBT) previously developed by the group have been integrated into functional circuits to show reliable performance, long-term stability and high performance.
