How DRAM changed the world
Update: Last year, we celebrated the 55th anniversary of DRAM’s invention. Today, marking the 56th anniversary, we reflect on technological advancements that the invention spurred and honor the memory and lasting influence of Mr. Dennard.
Robert Dennard, an influential American electrical engineer, invented the one-transistor memory cell for dynamic random-access memory (DRAM) in 1966. His work laid the foundation for modern electronic memory storage. Dennard also contributed to the MOSFET scaling law, also known as Dennard scaling, critical for integrated circuit miniaturization and performance enhancement. He received prestigious awards, including the IEEE Medal of Honor and the Kyoto Prize. Dennard passed away in April 2024 at the age of 91, leaving a legacy in electrical engineering and computer technology.
1966 was a long time ago. The Beatles released Revolver. The No. 1 film was The Good, the Bad, and The Ugly. And computers, such as they were, involved paper tape and punch card readers.
